ST · FETs & Power MOSFETs · MPN STY100NM60N
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| Gate Charge(Qg) | 330nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 98A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 28mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.6nF |
| Type | N-Channel |
N-Channel 600V 98A 625W Through Hole TO-247-3