ST STWA68N65DM6

ST · FETs & Power MOSFETs · MPN STWA68N65DM6

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)258pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation431W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)59mΩ
Number1 N-channel
Input Capacitance(Ciss)3.528nF
TypeN-Channel

Technical details

650V 55A 431W Through Hole TO-247

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