ST STWA67N60M6

ST · FETs & Power MOSFETs · MPN STWA67N60M6

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Specifications

Gate Charge(Qg)72.5nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)49mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.4nF
TypeN-Channel

Technical details

600V 52A 4.75V 330W 49mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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