ST · FETs & Power MOSFETs · MPN STWA65N65DM2AG
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 446W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.5nF |
| Type | N-Channel |
650V 60A 5V 446W 50mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS