ST STWA65N045M9

ST · FETs & Power MOSFETs · MPN STWA65N045M9

No reviews yet — be the first to review ST STWA65N045M9.

Specifications

Drain to Source Voltage650V
Gate Charge(Qg)80nC@10V
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation312W
RDS(on)45mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 650V 54A 312W Through Hole TO-247LONGLEADS

Related FETs & Power MOSFETs