ST STWA48N60DM2

ST · FETs & Power MOSFETs · MPN STWA48N60DM2

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Specifications

Gate Charge(Qg)70nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)79mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.25nF

Technical details

600V 40A 4V 300W 79mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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