ST STWA30N65DM6AG

ST · FETs & Power MOSFETs · MPN STWA30N65DM6AG

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation284W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 650V 28A 284W Through Hole TO-247

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