ST STW9N80K5

ST · FETs & Power MOSFETs · MPN STW9N80K5

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)0.65pF
RDS(on)730mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)340pF

Technical details

800V 7A 110W 730mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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