ST STW9N150

ST · FETs & Power MOSFETs · MPN STW9N150

No reviews yet — be the first to review ST STW9N150.

Specifications

Gate Charge(Qg)89.3nC@10V
Drain to Source Voltage1.5kV
Output Capacitance(Coss)294pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)22.4pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)3.255nF
TypeN-Channel

Technical details

N-Channel 1.5kV 8A 320W Through Hole TO-247

Related FETs & Power MOSFETs