ST STW8N120K5

ST · FETs & Power MOSFETs · MPN STW8N120K5

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Specifications

Gate Charge(Qg)13.7nC@960V
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)0.4pF
RDS(on)1.65Ω@10V
Number1 N-channel
Input Capacitance(Ciss)505pF

Technical details

N-Channel 1.2kV 6A 130W Through Hole TO-247

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