ST · FETs & Power MOSFETs · MPN STW75N65DM6-4
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 118nC@10V |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 480W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.7nF |
| Type | N-Channel |
650V 75A 4.75V 480W 36mΩ@10V 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS