ST STW75N60DM6

ST · FETs & Power MOSFETs · MPN STW75N60DM6

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Specifications

Gate Charge(Qg)117nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation446W
Reverse Transfer Capacitance (Crss@Vds)3.5pF
RDS(on)36mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.85nF
TypeN-Channel

Technical details

N-Channel 600V 72A 446W Through Hole TO-247

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