ST · FETs & Power MOSFETs · MPN STW70N65M2
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| Gate Charge(Qg) | 117nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 446W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.14nF |
650V 63A 3V 446W 46mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS