ST STW70N65M2

ST · FETs & Power MOSFETs · MPN STW70N65M2

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Specifications

Gate Charge(Qg)117nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation446W
Reverse Transfer Capacitance (Crss@Vds)2.9pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.14nF

Technical details

650V 63A 3V 446W 46mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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