ST STW70N65DM6

ST · FETs & Power MOSFETs · MPN STW70N65DM6

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation450W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.9nF
TypeN-Channel

Technical details

N-Channel 650V 68A 450W Through Hole TO-247

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