ST STW70N60M2-4

ST · FETs & Power MOSFETs · MPN STW70N60M2-4

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Specifications

Gate Charge(Qg)118nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation450W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.2nF

Technical details

650V 68A 2V 450W 40mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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