ST STW70N60DM2

ST · FETs & Power MOSFETs · MPN STW70N60DM2

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Specifications

Gate Charge(Qg)121nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)241pF
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation446W
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.508nF
TypeN-Channel

Technical details

N-Channel 600V 66A 446W Through Hole TO-247

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