ST STW69N65M5

ST · FETs & Power MOSFETs · MPN STW69N65M5

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Specifications

Gate Charge(Qg)143nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.42nF
TypeN-Channel

Technical details

N-Channel 650V 58A 330W Through Hole TO-247

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