ST · FETs & Power MOSFETs · MPN STW68N65DM6-4AG
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 118nC@10V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 72A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 480W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.6pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.9nF |
| Type | N-Channel |
N-Channel 650V 72A 480W Through Hole TO-247-4