ST STW65N60DM6

ST · FETs & Power MOSFETs · MPN STW65N60DM6

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Specifications

Drain to Source Voltage600V
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation368W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)71mΩ@10V
Input Capacitance(Ciss)2.5nF

Technical details

600V 46A 4.75V 368W 71mΩ@10V TO-247 Single FETs, MOSFETs RoHS

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