ST STW65N023M9-4

ST · FETs & Power MOSFETs · MPN STW65N023M9-4

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Specifications

Gate Charge(Qg)230nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)95A
Output Capacitance(Coss)140pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation463W
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.844nF
TypeN-Channel

Technical details

N-Channel 650V 95A 463W Through Hole TO-247-4

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