ST STW58N60DM2AG

ST · FETs & Power MOSFETs · MPN STW58N60DM2AG

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)90nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation360W
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

N-Channel 600V 50A 360W Through Hole TO-247

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