ST · FETs & Power MOSFETs · MPN STW58N60DM2AG
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 90nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 360W |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
| Type | N-Channel |
N-Channel 600V 50A 360W Through Hole TO-247