ST · FETs & Power MOSFETs · MPN STW56N65M2
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| Gate Charge(Qg) | 93nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 49A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 358W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
650V 49A 358W Through Hole TO-247