ST · FETs & Power MOSFETs · MPN STW56N65DM2
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 360W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
| Type | N-Channel |
650V 48A 5V 360W 65mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS