ST · FETs & Power MOSFETs · MPN STW56N60M2
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| Gate Charge(Qg) | 91nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 350W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
650V 52A 4V 350W 55mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS