ST · FETs & Power MOSFETs · MPN STW4N150
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 1.5kV |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | N-Channel |
N-Channel 1.5kV 4A 160W Through Hole TO-247