ST STW4N150

ST · FETs & Power MOSFETs · MPN STW4N150

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage1.5kV
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 1.5kV 4A 160W Through Hole TO-247

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