ST STW48N60M6-4

ST · FETs & Power MOSFETs · MPN STW48N60M6-4

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.25V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)3.1pF
RDS(on)69mΩ@10V
Number-
Input Capacitance(Ciss)2.578nF
TypeN-Channel

Technical details

600V 39A 3.25V 250W 69mΩ@10V N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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