ST STW48N60M6

ST · FETs & Power MOSFETs · MPN STW48N60M6

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Specifications

Gate Charge(Qg)57nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)3.1pF
RDS(on)61mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.578nF

Technical details

600V 39A 4V 250W 61mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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