ST STW48N60M2-4

ST · FETs & Power MOSFETs · MPN STW48N60M2-4

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Specifications

Gate Charge(Qg)70nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)4.3pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.06nF

Technical details

650V 42A 2V 300W 70mΩ@10V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS

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