ST STW45NM60

ST · FETs & Power MOSFETs · MPN STW45NM60

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)1.25nF
Current - Continuous Drain(Id)45A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation417W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.8nF
TypeN-Channel

Technical details

650V 45A 5V 417W 110mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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