ST STW45N60DM6

ST · FETs & Power MOSFETs · MPN STW45N60DM6

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Specifications

Output Capacitance(Coss)120pF
Pd - Power Dissipation210W
Configuration-
Gate Charge(Qg)44nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.92nF

Technical details

N-Channel 600V 30A Through Hole TO-247

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