ST · FETs & Power MOSFETs · MPN STW45N60DM2AG
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 56nC@480V |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 93mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
650V 34A 4V 250W 93mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS