ST STW42N65M5

ST · FETs & Power MOSFETs · MPN STW42N65M5

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)33A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)79mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.65nF
TypeN-Channel

Technical details

N-Channel 650V 33A 190W Through Hole TO-247

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