ST STW40N60M2

ST · FETs & Power MOSFETs · MPN STW40N60M2

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)34A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 600V 34A 250W Through Hole TO-247

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