ST STW3N170

ST · FETs & Power MOSFETs · MPN STW3N170

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage1.7kV
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)13Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 1.7kV 2.6A 160W Through Hole TO-247

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