ST STW3N150

ST · FETs & Power MOSFETs · MPN STW3N150

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Specifications

Gate Charge(Qg)29.3nC@1200V
Drain to Source Voltage1.5kV
Current - Continuous Drain(Id)2.5A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)13.2pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)939pF

Technical details

N-Channel 1.5kV 2.5A 140W Through Hole TO-247

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