ST STW38N65M5

ST · FETs & Power MOSFETs · MPN STW38N65M5

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)74pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)5.8pF
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

N-Channel 650V 30A 190W Through Hole TO-247

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