ST STW36NM60ND

ST · FETs & Power MOSFETs · MPN STW36NM60ND

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Specifications

Gate Charge(Qg)80.4nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)29A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.785nF

Technical details

N-Channel 600V 29A 190W Through Hole TO-247

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