ST STW33N60DM2

ST · FETs & Power MOSFETs · MPN STW33N60DM2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)43nC@10V
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
RDS(on)130mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 600V 24A 190W Through Hole TO-247

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