ST STW32NM50N

ST · FETs & Power MOSFETs · MPN STW32NM50N

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage500V
Current - Continuous Drain(Id)22A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)9.7pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.973nF
TypeN-Channel

Technical details

500V 22A 4V 190W 130mΩ@10V 1 N-channel N-Channel TO-247AC-3 Single FETs, MOSFETs RoHS

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