ST STW32N65M5

ST · FETs & Power MOSFETs · MPN STW32N65M5

No reviews yet — be the first to review ST STW32N65M5.

Specifications

Drain to Source Voltage650V
Gate Charge(Qg)72nC@10V
Current - Continuous Drain(Id)24A
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation150W
RDS(on)119mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.32nF

Technical details

650V 24A 150W 119mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs