ST STW31N65M5

ST · FETs & Power MOSFETs · MPN STW31N65M5

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Specifications

Configuration-
Gate Charge(Qg)45nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)148mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.865nF

Technical details

650V 22A 5V 150W 148mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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