ST · FETs & Power MOSFETs · MPN STW30NM50N
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| Gate Charge(Qg) | 94nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 115mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.74nF |
500V 27A 2V 190W 115mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS