ST STW28N60DM2

ST · FETs & Power MOSFETs · MPN STW28N60DM2

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Specifications

Gate Charge(Qg)34nC@10V
Configuration-
Drain to Source Voltage600V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel 600V 21A 170W Through Hole TO-247

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