ST STW27NM60ND

ST · FETs & Power MOSFETs · MPN STW27NM60ND

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

600V 21A 5V 160W 160mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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