ST STW26NM50

ST · FETs & Power MOSFETs · MPN STW26NM50

No reviews yet — be the first to review ST STW26NM50.

Specifications

Drain to Source Voltage500V
Gate Charge(Qg)76nC@10V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation313W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

500V 30A 5V 313W 120mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs