ST STW24N60M6

ST · FETs & Power MOSFETs · MPN STW24N60M6

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)76pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.25V
Pd - Power Dissipation130W
RDS(on)190mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4.5pF
Number1 N-channel
Input Capacitance(Ciss)960pF
TypeN-Channel

Technical details

N-Channel 600V 17A 130W Through Hole TO-247

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