ST STW20NM60FD

ST · FETs & Power MOSFETs · MPN STW20NM60FD

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)20A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

N-Channel 600V 20A 214W Through Hole TO-247

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