ST STW20NM50FD

ST · FETs & Power MOSFETs · MPN STW20NM50FD

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Specifications

Configuration-
Gate Charge(Qg)53nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)20A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.38nF

Technical details

N-Channel 500V 20A 214W Through Hole TO-247

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