ST · FETs & Power MOSFETs · MPN STW19NM60N
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 285mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
600V 13A 2V 110W 285mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS