ST · FETs & Power MOSFETs · MPN STW19NM50N
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 14A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 250mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
| Type | N-Channel |
500V 14A 4V 110W 250mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS